Elimination of the low resistivity of Si substrates in GaN...

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IEEE Electron Device Letters 2020

Elimination of the low resistivity of Si substrates in GaN HEMTs by introducing a SiC intermediate and a thick nitride layer

Bose, Arijit, Biswas, Debaleen, Hishiki, Shigeomi, Ouchi, Sumito, Kitahara, Koichi, Kawamura, Keisuke, Wakejima, Akio
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3019482
File:
PDF, 463 KB
2020
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