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Elimination of the low resistivity of Si substrates in GaN HEMTs by introducing a SiC intermediate and a thick nitride layer
Bose, Arijit, Biswas, Debaleen, Hishiki, Shigeomi, Ouchi, Sumito, Kitahara, Koichi, Kawamura, Keisuke, Wakejima, AkioYear:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3019482
File:
PDF, 463 KB
2020