Atomic layer epitaxy of InAs with high silicon doping...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2020 / 09 Vol. 38; Iss. 5

Atomic layer epitaxy of InAs with high silicon doping concentration

Cohen Elias, Doron, Cohen, Guy M., Memram, David, Saad, Shmuel, Bloom, Arnold, Shusterman, Sergey Shay, Katz, Moti, Hopstaken, Marinus, Saccomanno, Michael, Spratt, Will, Lee, Sanghoon, Lavoie, Christ
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Volume:
38
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/6.0000339
Date:
September, 2020
File:
PDF, 1.79 MB
2020
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