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Physics and Technology of Silicon Carbide Devices || Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy
Hijikata, YasutoVolume:
10.5772/34
Year:
2012
DOI:
10.5772/50749
File:
PDF, 1.84 MB
2012