Selective photosensitivity of metal–oxide–semiconductor...

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Journal of Materials Science: Materials in Electronics 2020 / 08

Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature

Paz, J., Nedev, N., Nesheva, D., Curiel, M., Manolov, E., Valdez, B., Perez, O., Mateos, D., Nedev, R., Arias, A., Ramirez, M., Dzhurkov, V.
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Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-020-04297-4
Date:
August, 2020
File:
PDF, 1.01 MB
2020
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