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[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 4H-SiC Trench MOSFET with low on-resistance at high temperature
Takaya, Hidefumi, Misumi, Tadashi, Fujiwara, Hirokazu, Ito, TakahiroYear:
2020
DOI:
10.1109/ISPSD46842.2020.9170085
File:
PDF, 1.15 MB
2020