Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study
Park, Tae Ho, Yang, Jeong Yong, Ma, Jiyeon, Yoo, GeonwookVolume:
77
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.77.317
Date:
August, 2020
File:
PDF, 700 KB
2020