Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using...

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Wireless Personal Communications 2020 / 09

Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique

Kumar, T. Santosh, Tripathi, Suman Lata
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Journal:
Wireless Personal Communications
DOI:
10.1007/s11277-020-07765-6
Date:
September, 2020
File:
PDF, 1.14 MB
2020
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