Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield
Arbia, Marwa Ben, Helal, Hicham, Saidi, Faouzi, Maaref, HassenJournal:
Journal of Electronic Materials
DOI:
10.1007/s11664-020-08417-y
Date:
September, 2020
File:
PDF, 1.44 MB
2020