A study on the impact of mid-gap defects on vertical GaN...

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IEEE Transactions on Semiconductor Manufacturing 2020

A study on the impact of mid-gap defects on vertical GaN diodes

Ebrish, Mona A., Anderson, Travis J., Koehler, Andrew D., Foster, Geoffrey M., Gallagher, James C., Kaplar, Robert J., Gunning, Brendan P., Hobart, Karl D.
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Year:
2020
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/TSM.2020.3019212
File:
PDF, 629 KB
2020
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