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The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors
Lan, Changyong, Kang, Xiaolin, Meng, You, Wei, Renjie, Bu, Xiuming, Yip, SenPo, Ho, Johnny C.Journal:
Nano Research
DOI:
10.1007/s12274-020-3003-6
Date:
September, 2020
File:
PDF, 2.75 MB
2020