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Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory
Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, ToshiroVolume:
54
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DC16
Date:
April, 2015
File:
PDF, 3.23 MB
2015