1200-V 4H-SiC Merged p-i-n Schottky Diodes With High...

IEEE Transactions on Electron Devices 2020 / 9 Vol. 67; Iss. 9

1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability

Liu, Li, Wu, Jiupeng, Ren, Na, Guo, Qing, Sheng, Kuang
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3007136
Date:
September, 2020
File:
PDF, 4.71 MB
2020
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