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[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A Charge-to-Breakdown (Q BD ) Approach to SiC Gate Oxide Lifetime Extraction and Modeling
Moens, P., Franchi, J., Lettens, J., Schepper, L. De, Domeij, M., Allerstam, F.Year:
2020
DOI:
10.1109/ISPSD46842.2020.9170097
File:
PDF, 1.03 MB
2020