1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor...

Materials Science Forum 2020 / 7 Vol. 1004

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Kanale, Ajit, Cheng, Tzu Hsuan, Han, Ki Jeong, Baliga, B. Jayant, Bhattacharya, Subhashish, Hopkins, Douglas
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.1004.872
Date:
July, 2020
File:
PDF, 2.49 MB
2020
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