[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Investigation of dV DS /dt Controllability on R g in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dV DS /dt
Aiba, Ruito, Matsui, Kevin, Okawa, Masataka, Kanamori, Taiga, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, ShinsukeYear:
2020
DOI:
10.1109/ISPSD46842.2020.9170065
File:
PDF, 1.80 MB
2020