[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Investigation of Gate and Drain Leakage Currents During the Short Circuit of SiC-MOSFETs
Unger, Christian, Pfost, MartinYear:
2020
DOI:
10.1109/ISPSD46842.2020.9170074
File:
PDF, 1.16 MB
2020