Temperature Gradient ZnO Deposited via ALD for...

IEEE Journal of the Electron Devices Society 2020 Vol. 8

Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications

Che, Bowen, Zhang, Hao, Yang, Jun, Qi, Jie, Ding, Xingwei, Zhang, Jianhua
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Volume:
8
Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2020.3015030
File:
PDF, 1.37 MB
2020
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