Design and Optimisation of Schottky Contact Integration in...

Materials Science Forum 2020 / 7 Vol. 1004

Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

Dai, Tian Xiang, Renz, A.B., Zhang, Luyang, Vavasour, Oliver J., Baker, G.W.C, Shah, Vishal Ajit, Mawby, Philip A., Gammon, Peter M.
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.1004.808
Date:
July, 2020
File:
PDF, 532 KB
2020
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