Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free...

Materials Science Forum 2020 / 7 Vol. 1004

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Itoh, Hironori, Enokizono, Taro, Miyase, Takaya, Hori, Tsutomu, Wada, Keiji, Doi, Hideyuki, Furumai, Masaki
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Volume:
1004
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.1004.71
Date:
July, 2020
File:
PDF, 2.13 MB
2020
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