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Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device
Chen, Liangliang, Len, Kanming, Ma, Zhongyuan, Yu, Xinyue, Shen, Zixiao, You, Jiayang, Li, Wei, Xu, Jun, Xu, Ling, Chen, Kunji, Feng, DuanJournal:
The Journal of Physical Chemistry Letters
DOI:
10.1021/acs.jpclett.0c01563
Date:
September, 2020
File:
PDF, 5.50 MB
2020