Surrounding Gate Vertical-Channel FET With a Gate Length of...

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IEEE Transactions on Electron Devices 2020

Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel

Fujiwara, Hirokazu, Sato, Yuta, Saito, Nobuyoshi, Ueda, Tomomasa, Ikeda, Keiji
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.3021996
File:
PDF, 2.07 MB
2020
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