In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT...

IEEE Journal of the Electron Devices Society 2020 Vol. 8

In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz f τ and 256 GHz f max

Markman, Brian, Suran Brunelli, Simone Tommaso, Goswami, Aranya, Guidry, Matthew, Rodwell, Mark J. W.
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Volume:
8
Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2020.3017141
File:
PDF, 2.05 MB
2020
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