Low Turn-off Loss 4H-SiC Insulated Gate Bipolar Transistor...

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IEEE Journal of the Electron Devices Society 2020

Low Turn-off Loss 4H-SiC Insulated Gate Bipolar Transistor with a Trench Heterojunction Collector

Wang, Ying, Yu, Cheng-hao, Mao, Hong-kai, Wu, Xue, Su, Fang-wen, Li, Xing-ji, Yang, Jian-qun
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Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2020.3022571
File:
PDF, 853 KB
2020
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