[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - UIS Withstanding Capability of GaN E-HEMTs with Schottky and Ohmic p-GaN contact

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