Origin of ring defects in high In content green InGaN/GaN...

MRS Internet Journal of Nitride Semiconductor Research 2005 Vol. 10

Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study

Shahedipour-Sandvik, F., Jamil, M., Topol, K., Grandusky, J. R., Dunn, Kathleen A, Ramer, J., Merai, V. N.
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Volume:
10
Year:
2005
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300000557
File:
PDF, 254 KB
2005
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