Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Valery Afanas’ev, André StesmansVolume:
5
Language:
english
Pages:
6
DOI:
10.1007/s12274-011-0183-0
Date:
January, 2012
File:
PDF, 367 KB
english, 2012