Plasma-Grown Oxide Gate GaAs Deep Depletion MOS FET

Japanese Journal of Applied Physics 1978 / 01 Vol. 17; Iss. S1

Plasma-Grown Oxide Gate GaAs Deep Depletion MOS FET

Mimura, Takashi, Yokoyama, Naoki, Nakayama, Yoshiro, Fukuta, Masumi
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Volume:
17
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjaps.17s1.153
Date:
January, 1978
File:
PDF, 706 KB
1978
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