Ta2O5-y-based ReRAM device with annealing-free...

Journal of Alloys and Compounds 2021 / 02 Vol. 854

Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device

Kim, Donghyun, Park, Ju Hyun, Jeon, Dong Su, Dongale, Tukaram D., Kim, Tae Geun
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Volume:
854
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2020.157261
Date:
February, 2021
File:
PDF, 2.39 MB
2021
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