Modeling and Mechanism of Enhanced Performance of...

The Journal of Physical Chemistry C 2020 / 10

Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress

Dai, Chaoqi, Qi, Guoqiang, Qiao, Hai, Wang, Weiliang, Xiao, Han, Hu, Yongbin, Guo, Liqiang, Dai, Mingzhi, Wang, Pengjun, Webster, Thomas J.
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Journal:
The Journal of Physical Chemistry C
DOI:
10.1021/acs.jpcc.0c05911
Date:
October, 2020
File:
PDF, 2.31 MB
2020
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