Highly Scaled, High Endurance, Ω-Gate, Nanowire...

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IEEE Electron Device Letters 2020

Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

Bae, Jong-Ho, Kwon, Daewoong, Jeon, Namho, Cheema, Suraj, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3028339
File:
PDF, 560 KB
2020
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