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Improved microwave sensitivity to 706 kV/W by using p -GaAsSb/ n -InAs nanowire backward diodes for low-power energy harvesting at zero bias
Takahashi, Tsuyoshi, Kawaguchi, Kenichi, Sato, Masaru, Suhara, Michihiko, Okamoto, NaoyaVolume:
10
Journal:
AIP Advances
DOI:
10.1063/5.0006061
Date:
August, 2020
File:
PDF, 1.79 MB
2020