Implementation of linearly modulated work function AÏB1âÏ gate electrode and Si0.55Ge0.45 N+âpocket doping for performance improvement in gate stack vertical-TFET
Wadhwa, Girish, Singh, JeetendraVolume:
126
Journal:
Applied Physics A
DOI:
10.1007/s00339-020-04065-5
Date:
November, 2020
File:
PDF, 2.12 MB
2020