Low background doping in AlInN grown on GaN via...

Journal of Crystal Growth 2020 / 10 Vol. 548

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

Borovac, Damir, Sun, Wei, Peart, Matthew R., Song, Renbo, Wierer, Jonathan J., Tansu, Nelson
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Volume:
548
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2020.125847
Date:
October, 2020
File:
PDF, 2.70 MB
2020
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