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Effect of the chemical composition at the memory behavior of Al/BST/SiO2/Si-gate-FET structure
Ala’eddin A. Saif, Z. A. Z. Jamal, P. PoopalanVolume:
1
Language:
english
Pages:
6
DOI:
10.1007/s13204-011-0024-1
Date:
September, 2011
File:
PDF, 1.85 MB
english, 2011