Impact of dislocation pits on device performances and...

Journal of Alloys and Compounds 2021 / 02 Vol. 854

Impact of dislocation pits on device performances and interface quality degradation for E-mode recessed-gate Al2O3/GaN MOSFETs

He, Liang, Li, Liuan, Que, Taotao, Zhang, Jinwei, Feng, Chenliang, Liu, Zhenxing, Wu, Qianshu, Chen, Jia, Qiu, Qiuling, Wang, Yapeng, Li, Chenglang, Zhang, Qi, Liu, Yang
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Volume:
854
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2020.157144
Date:
February, 2021
File:
PDF, 2.04 MB
2021
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