Ohmic contact formation to GaN by Si+ implantation doping:...

Materials Science in Semiconductor Processing 2021 / 02 Vol. 122

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Kozubal, Maciej A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Iwona, Sankowska, Eliana, Kamińska
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Volume:
122
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.105491
Date:
February, 2021
File:
PDF, 6.64 MB
2021
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