Investigation of AlGaN/GaN high electron mobility...

Superlattices and Microstructures 2020 / 11 Vol. 147

Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

Dalapati, P., Urata, S., Egawa, T.
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Volume:
147
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2020.106709
Date:
November, 2020
File:
PDF, 6.32 MB
2020
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