Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing...

Journal of Crystal Growth 2020 / 09 Vol. 546

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

Ji, Shiyang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime
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Volume:
546
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2020.125809
Date:
September, 2020
File:
PDF, 2.14 MB
2020
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