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Investigation of current collapse and recovery time due to deep level defect traps in β -Ga 2 O 3 HEMT
Singh, R., Lenka, T. R., Velpula, R. T., Jain, B., Bui, H. Q. T., Nguyen, H. P. T.Volume:
41
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/41/10/102802
Date:
October, 2020
File:
PDF, 448 KB
2020