Demonstration of Superior Electrical Characteristics for...

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IEEE Electron Device Letters 2020

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET with Higher Schottky Barrier Height Metal

Aiba, Ruito, Matsui, Kevin, Baba, Masakazu, Harada, Shinsuke, Yano, Hiroshi, Iwamuro, Noriyuki
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.3031598
File:
PDF, 558 KB
2020
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