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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy
Yao, Yong-Zhao, Sugawara, Yoshihiro, Yokoe, Daisaku, Sato, Koji, Ishikawa, Yukari, Okada, Narihito, Tadatomo, Kazuyuki, Sudo, Masaki, Kato, Masashi, Miyoshi, Makoto, Egawa, TakashiYear:
2020
Journal:
CrystEngComm
DOI:
10.1039/d0ce01344g
File:
PDF, 5.80 MB
2020