A unified aging compact model for hot carrier degradation...

Solid-State Electronics 2020 / 10 Vol. 172

A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs

Mukherjee, C., Fischer, G.G., Marc, F., Couret, M., Zimmer, T., Maneux, C.
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Volume:
172
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2020.107900
Date:
October, 2020
File:
PDF, 1.58 MB
2020
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