Asymmetric Low Metal Contamination Ni-induced Lateral...

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IEEE Journal of the Electron Devices Society 2020

Asymmetric Low Metal Contamination Ni-induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors with Low OFF-state Currents for Back-End of Line (BEOL) Compatible Devices Applications

Kuo, Po-Yi, Lo, Shao-Chi, Wei, Hsiu-Hsuan, Liu, Po-Tsun
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Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2020.3030962
File:
PDF, 2.91 MB
2020
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