Enhanced Non-uniformity Modeling of 4H-SiC Schottky Diode...

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IEEE Journal of the Electron Devices Society 2020

Enhanced Non-uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

Brezeanu, Gheorghe, Pristavu, Gheorghe, Draghici, Florin, Pascu, Razvan, Corte, Francesco Della, Rascuna, Simone
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Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2020.3032799
File:
PDF, 1.57 MB
2020
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