[IEEE 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2020.8.10-2020.8.13)] 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - 98% Endurance Error Reduction by Hard_Verify for 40nm TaO x based ReRAM
Yonai, Tsubasa, Kinoshita, Hiroshi, Yasuhara, Ryutaro, Takeuchi, KenYear:
2020
DOI:
10.1109/vlsi-tsa48913.2020.9203572
File:
PDF, 662 KB
2020