Impedance of MIS Devices Based on nBn Structures from...

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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Yu., Yakushev, M. V.
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Journal:
Russian Physics Journal
DOI:
10.1007/s11182-020-02117-0
Date:
October, 2020
File:
PDF, 338 KB
2020
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