Analysis of drain current transient stability of AlGaN/GaN...

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Microelectronics Reliability 2020 / 10

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Tartarin, J.G., Lazar, O., Rumeau, A., Franc, B., Bary, L., Lambert, B.
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Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113895
Date:
October, 2020
File:
PDF, 2.20 MB
2020
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