Investigation on Surge Current Capability of 4H-SiC...

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IEEE Journal of Emerging and Selected Topics in Power Electronics 2020

Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various VGS Biases

Zhu, Zhengyun, Xu, Hongyi, Liu, Li, Ren, Na, Sheng, Kuang
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Year:
2020
Journal:
IEEE Journal of Emerging and Selected Topics in Power Electronics
DOI:
10.1109/JESTPE.2020.3028094
File:
PDF, 5.49 MB
2020
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