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[IEEE 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Hiroshima, Japan (2020.9.2-2020.9.4)] 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter measurements
Tabuchi, Masaya, Otsuka, Tomohiro, Yamaguchi, Yutaro, Shinjo, Shintaro, Oishi, ToshiyukiYear:
2020
DOI:
10.1109/rfit49453.2020.9226246
File:
PDF, 371 KB
2020