Accumulative total ionizing dose (TID) and transient dose...

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Microelectronics Reliability 2020 / 10

Accumulative total ionizing dose (TID) and transient dose rate (TDR) effects on planar and vertical ferroelectric tunneling-field-effect-transistors (TFET)

Yan, Gangping, Xu, Gaobo, Bi, Jinshun, Tian, Guoliang, Xu, Qiuxia, Yin, Huaxiang, Li, Yongliang
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Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2020.113855
Date:
October, 2020
File:
PDF, 1.22 MB
2020
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